Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, ρab, is significantly higher than the c axis one, ρc, with ρab/ρc ≈ 1.4 for YPtIn and ≈ 4.2−4.7 for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities. PACS numbers: 72.15.Eb, 71.20.Lp Submitted to: J. Phys.: Condens. Matter Electronic structure and transport properties of YPtIn and LuAgGe 2